bt131w series logic level general description glass passivated, sensitive gate triacs symbol parameter max. max. unit in a plastic envelope suitable for surface mounting, intended for use in bt131w- 500 600 general purpose bidirectional drm repetitive peak off-state voltages 500 600 v switching and phase control t(rms) rms on-state current 1 1 a applications. these devices are tsm non-repetitive peak on-state current 10 10 a intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. sot223 limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500 -600 v drm repetitive peak off-state - 500 1 600 1 v voltages i t(rms) rms on-state current full sine wave; t sp 108 ?c - 1 a i tsm non-repetitive peak full sine wave; t j = 25 ?c prior to on-state current surge t = 20 ms - 10 a t = 16.7 ms - 11 a i 2 ti 2 t for fusing t = 10 ms - 0.5 a 2 s di t /dt repetitive rate of rise of i tm = 1.5 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/ m s triggering t2+ g+ - 50 a/ m s t2+ g- - 50 a/ m s t2- g- - 50 a/ m s t2- g+ - 10 a/ m s i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 3 a/ m s. quick reference data symbol v i i 2014-6-16 1 www.kersemi.com
thermal resistances symbol parameter conditions min. typ. max. unit r th j-sp thermal resistance full or half cycle - - 15 k/w junction to solder point r th j-a thermal resistance pcb mounted; minimum footprint - 156 - k/w junction to ambient pcb mounted; pad area as in fig:14 - 70 - k/w static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 0.4 3 ma t2+ g- - 1.3 3 ma t2- g- - 1.4 3 ma t2- g+ - 3.8 7 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 1.2 5 ma t2+ g- - 4.0 8 ma t2- g- - 1.0 5 ma t2- g+ - 2.5 8 ma i h holding current v d = 12 v; i gt = 0.1 a - 1.3 5 ma v t on-state voltage i t = 2 a - 1.2 1.5 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; t j = 125 ?c 0.2 0.3 - v i d off-state leakage current v d = v drm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of change of v dm = 67% v drm(max) ; t j = 125 ?c; 5 15 - v/ m s off-state voltage exponential waveform; r gk = 1 k w t gt gate controlled turn-on i tm = 1.5 a; v d = v drm(max) ; i g = 0.1 a; - 2 - m s time di g /dt = 5 a/ m s bt131w series 2014-6-16 2 www.kersemi.com
fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where a = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus lead temperature t lead . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t lead 108?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 = 180 120 90 60 30 bt134w it(rms) / a ptot / w tsp(max) / c 125 122 119 116 113 110 107 104 1 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1 1.2 bt134w tsp / c it(rms) / a 108 c 1 10 100 1000 bt134w t / s itsm / a 10us 100us 1ms 10ms 100ms t i tsm time i tj initial = 25 c max t di /dt limit t t2- g+ quadrant 0.01 0.1 1 10 0 0.5 1 1.5 2.0 2.5 3 bt132d surge duration / s it(rms) / a 1 10 100 1000 0 2 4 6 8 10 12 bt134w number of cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt136 tj / c vgt(tj) vgt(25 c) bt131w series 2014-6-16 3 www.kersemi.com
fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-sp , versus pulse width t p . fig.12. minimum, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt131 tj / c t2+ g+ t2+ g- t2- g- t2- g+ igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 0.5 1 1.5 2 bt134w vt / v it / a tj = 125 c typ max tj = 25 c vo = 1.0 v rs = 0.21 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 1 10 zth j-sp (k/w) 100 t p p t d unidirectional bidirectional bt134w -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c ih(tj) ih(25c) 0 50 100 150 1 10 100 1000 tj / c dvd/dt (v/us) bt131w series 2014-6-16 4 www.kersemi.com
mounting instructions dimensions in mm. fig.13. soldering pattern for surface mounting sot223. 3.8 min 6.3 2.3 4.6 1.5 min 1.5 min 1.5 min (3x) bt131w series 2014-6-16 5 www.kersemi.com
mechanical data dimensions in mm net mass: 0.11 g fig.14. sot223 surface mounting package. notes 1. for further information, refer to philips publication sc18 " smd footprint design and soldering guidelines". order code: 9397 750 00505. 2. epoxy meets ul94 v0 at 1/8". 6.7 6.3 3.1 2.9 4 1 23 2.3 1.05 0.85 0.80 0.60 4.6 3.7 3.3 7.3 6.7 b a 0.10 0.02 13 16 max 1.8 max 10 max 0.32 0.24 (4x) b m 0.1 a m 0.2 2014-6-16 6 www.kersemi.com bt131w series
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